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By L. Aleksandrov, G. Siddall

Written for physicists, chemists, and engineers specialising in crystal and movie development, semiconductor electronics, and diverse functions of skinny motion pictures, this booklet studies promising clinical and engineering developments in skinny motion pictures and thin-films fabrics technological know-how. the 1st half discusses the actual features of the approaches happening throughout the deposition and development of flicks, the primary equipment of acquiring semiconductor motion pictures and of reparing substrate surfaces on which crystalline motion pictures are grown, and the most purposes of flicks. the second one half includes info on epitaxial interfaces and on methods of decreasing transition areas in motion pictures and film-type units, at the approaches of crystallization and recrystallization of amorphous movies, and on thermodynamic stipulations, mechanisms and kinetic parameters of speeded up crystallization

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Extra info for Growth of Crystalline Semiconductor Materials on Crystal Surfaces

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16) and high mobility of charge carriers in GaAs films are used in GaAs devices. Monolithic integrated circuits combining micro- and optoelec­ tronic devices are produced on the basis of multilayer structures including GaAs and solid solutions of the A 3 B 5 type. Figure 17 shows the IC structure comprising a passive planar waveguide, that operates due to the difference in refractive indices n and n of gallium arsenide, a photodetector and an amplifier on the Schottky barrier Pt-InGaAs. 92). Ohmic contacts are made by gold spraying (ref.

The results of the study of film condensation from a gas phase of non-stoichiometric composition suggested the possibility of ac­ complishing, in the same manner and in a single stage, the synthe­ sis and alloying of activated CdSe:Ac films at T e v = 700°C and T s = 430-630°C, by the co-evaporation of CdSe with both isovalent (zinc and cadmium) and heterovalent (gallium and indium) donor dopants, and by the co-evaporation of tellurium (ref. 86). To prevent the growth of solid solution films, the activator vapour pressures p A c were in general below the partial equilibrium pressures of the main component.

Ionization by electron bombardment was used in epitaxy of sili­ con, sulphur zinc, gallium arsenide and indium antimonide, as well as metals from the beams of atoms and molecules condensed at adiabatic expansion in a high vacuum. Clusters contained from 500 to 2000 atoms, but at ionization acquired single charges. An acceler­ ating voltage (up to 8 kV) allowed control of the kinetic energy of clusters and the rate of film deposition. The use of the flow of formed clusters permitted an improvement in the film structure at growth rates of % 1 nm/s, as surface heating and cleaning occurred (ref.

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